TrenchT2 TM HiperFET TM
Power MOSFET
IXFH320N10T2
IXFT320N10T2
V DSS
I D25
R DS(on)
= 100V
= 320A
≤ 3.5m Ω
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-247 (IXFH)
Symbol
Test Conditions
Maximum Ratings
G
D
S
D (Tab)
V DSS
T J = 25 ° C to 175 ° C
100
V
V DGR
V GSS
V GSM
I D25
I LRMS
I DM
T J = 25 ° C to 175 ° C, R GS = 1M Ω
Continuous
Transient
T C = 25 ° C (Chip Capability)
Lead Current Limit, RMS
T C = 25 ° C, Pulse Width Limited by T JM
100
± 20
± 30
320
160
800
V
V
V
A
A
A
TO-268 (IXFT)
G
S
D (Tab)
I A
E AS
dv/dt
P D
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 175°C
T C = 25 ° C
160
1.5
15
1000
A
J
V/ns
W
G = Gate
S = Source
Features
D = Drain
Tab = Drain
T J
T JM
T stg
-55 ... +175
175
-55 ... +175
° C
° C
° C
International Standard Packages
High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
T L
T sold
M d
Weight
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-247
TO-268
300
260
1.13 / 10
6
4
° C
° C
Nm/lb.in.
g
g
Fast Intrinsic Diode
Low R DS(on)
Advantages
Easy to Mount
Space Savings
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
High Power Density
BV DSS
V GS(th)
I GSS
I DSS
R DS(on)
V GS = 0V, I D = 1mA
V DS = V GS , I D = 250 μ A
V GS = ± 20V, V DS = 0V
V DS = V DSS , V GS = 0V
T J = 150 ° C
V GS = 10V, I D = 100A, Notes 1 & 2
100
2.0
V
4.0 V
± 200 nA
25 μ A
1.75 mA
3.5 m Ω
Applications
Synchronous Recification
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
? 2012 IXYS CORPORATION, All Rights Reserved
DS100237A(5/12)
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